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Raman Spectroscopy of CVD Graphene during the Transfer Process from Copper to SiO2/Si Substrates

Claudia Bautista-Flores

The Raman range of CVD graphene was observed amid the exchange preparation, from the developing copper substrate to the ultimate silicon substrate, passing through diverse fluids utilized to break down copper and to clean the coming about carbon film. The position of G and 2D crests moved when graphene was on the surface of distinctive fluids. The biggest Raman move happened for ferric nitrate and nitric corrosive arrangements; this result appears to show that these arrangements actuated the p-type character of CVD graphene. The basic finding is that the circumstance of graphene (strain and doping) stored by means of a CVD strategy changes when it is interpreted from the first to the ultimate substrate. We arranged single-layer graphene movies through mechanical shedding of Kish graphite and che- mical vapor testimony methods. These tests were treated in nitric corrosive, sulfuric corrosive, sodium hydroxide and ammonium hydroxide arrangements to initiate doping. We utilized Smaller scale Raman Spectroscopy some time recently and after the chemical functionalization to screen contrasts within the Raman range. We found moving for both G and 2D crests of graphene and a noteworthy upshifting in tests treated with sulfuric corrosive, comparable to those detailed for nitric corrosive.